= 0.019鈩?/div>
I
D
= 46A聟
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D -P A K
T O -2 52 A A
I-P A K
TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜聡
Avalanche Current聛聡
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
46聟
29聟
220
69
0.56
鹵16
240
34
6.9
2.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
Min.
Typ.
Max.
1.8
50
110
Units
擄C/W
R
胃JC
Junction-to-Case
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
R
胃JA
Junction-to-Ambient (PCB mount)**
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
R
胃JA
Junction-to-Ambient
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
8/7/96
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IRLU3103相關(guān)型號(hào)PDF文件下載
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
ETC
-
英文版
HEXFET POWER MOSFET
IRF
-
英文版
HEXFET POWER MOSFET
IRF [Inter...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
ETC
-
英文版
HEXFET? Power MOSFET
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.6A I(D) ...
ETC
-
英文版
HEXFET? Power MOSFET
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | T...
ETC
-
英文版
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
IRF
-
英文版
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.9A I(D) |...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.2A I(D) |...
ETC
-
英文版
HEXFET Power MOSFET
IRF