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IRLU2908 Datasheet

  • IRLU2908

  • 80V Single N-Channel HEXFET Power MOSFET in a I-Pak package

  • 11頁(yè)

  • ETC

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PD - 94501
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
HEXFET
廬
Power MOSFET
D
IRLR2908
IRLU2908
V
DSS
= 80V
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
S
R
DS(on)
= 28m鈩?/div>
I
D
= 30A
Description
Specifically designed for Automotive applications, this HEXFET 廬 Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175擄C junction operating
temperature, low R胃JC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
D-Pak
IRLR2908
I-Pak
IRLU2908
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
39
28
30
150
120
0.77
鹵 16
180
250
See Fig.12a,12b,15,16
2.3
-55 to + 175
Units
A
聶
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
h
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Current
聶
i
d
300 (1.6mm from case )
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.3
40
110
Units
擄C/W
j脙
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
www.irf.com
1
02/13/03

IRLU2908相關(guān)型號(hào)PDF文件下載

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    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2A I(D) | ...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | ...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.2A I(D) |...
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