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IRLU024Z Datasheet

  • IRLU024Z

  • AUTOMOTIVE MOSFET

  • 11頁(yè)

  • IRF

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PD - 95825A
AUTOMOTIVE MOSFET
IRLR024Z
IRLU024Z
HEXFET
廬
Power MOSFET
D
Features
n
n
n
n
n
n
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
G
S
R
DS(on)
= 58m鈩?/div>
I
D
= 16A
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRLR024Z
I-Pak
IRLU024Z
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
16
11
64
35
0.23
鹵 16
Units
A
W
W/擄C
V
mJ
A
mJ
聶
P
D
@T
C
= 25擄C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
d
I
AR
E
AR
T
J
T
STG
Avalanche Current
脙聶
h
25
25
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
擄C
300 (1.6mm from case )
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Typ.
Max.
4.28
40
110
Units
擄C/W
i
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
HEXFET
廬
is a registered trademark of International Rectifier.
www.irf.com
1
06/21/04

IRLU024Z相關(guān)型號(hào)PDF文件下載

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