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IRLU014N Datasheet

  • IRLU014N

  • HEXFET Power MOSFET

  • 113.08KB

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD- 94350
IRLR/U014N
HEXFET
廬
Power MOSFET
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
TO-252AA
I-Pak
TO-251AA
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.14鈩?/div>
I
D
= 10A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
10
7.1
40
28
0.2
鹵 16
35
6.0
2.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
5.3
50
110
Units
擄C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
5/4/99

IRLU014N 產(chǎn)品屬性

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 10A

  • 140 毫歐 @ 6A，10V

  • 1V @ 250µA

  • 7.9nC @ 5V

  • 265pF @ 25V

  • 28W

  • 通孔

  • TO-251-3 長引線，IPak，TO-251AB

  • I-Pak

  • 管件

  • *IRLU014N

IRLU014N相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    HEXFET POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.6A I(D) ...
    ETC
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | T...
    ETC
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.9A I(D) |...
    ETC
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD
  • 英文版
    Advanced Power MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.2A I(D) |...
    ETC
  • 英文版
    HEXFET Power MOSFET
    IRF

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