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IRLS620A Datasheet

  • IRLS620A

  • Advanced Power MOSFET

  • 255.25KB

  • 7頁

  • FAIRCHILD

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上傳產品規(guī)格書

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Advanced Power MOSFET
FEATURES
!
Logic-Level Gate Drive
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 10
渭A
(Max.) @ V
DS
= 200V
!
Lower R
DS(ON)
: 0.609惟 (Typ.)
IRLS620A
BV
DSS
= 200 V
R
DS(on)
= 0.8
惟
I
D
= 4.1 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8錛?from case for 5-seconds
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
Value
200
4.1
2.5
18
鹵20
33
4.1
2.6
5
26
0.21
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.8
62.5
Units
o
C/W
Rev. A

IRLS620A 產品屬性

  • Fairchild Semiconductor

  • MOSFET

  • N-Channel

  • 200 V

  • +/- 20 V

  • 4.1 A

  • 0.8 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220F

  • Tube

  • 6 ns

  • 3.3 S

  • - 55 C

  • 26 W

  • 6 ns

  • 50

  • 24 ns

  • IRLS620A_NL

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