= 0.046鈩?/div>
I
D
= 2.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8錛?from case for 5-seconds
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
Value
200
2.5
1.6
12
鹵20
20
2.9
1.9
5.0
19
0.15
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
6.6
62.5
Units
o
C/W
Rev. A
next
IRLS610A 產(chǎn)品屬性
Fairchild Semiconductor
N-Channel
200 V
+/- 20 V
2.5 A
0.046 Ohms
Single
+ 150 C
Through Hole
TO-220F
6 ns
- 55 C
19 W
9 ns
20 ns
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