鈥?/div>
N-Channel Application-Specific MOSFET
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Minimizes Parallel MOSFETs for high current
applications
HEXFET
廬
MOSFET for DC-DC Converters
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
converters including R
DS(on)
, gate charge and Cdv/dt-
induced turn-on immunity. The IRLR8503 offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
G
S
D-Pak
DEVICE RATINGS (MAX. Values)
IRLR8503
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
30V
18 m鈩?/div>
20 nC
8 nC
29.5 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
鈮?/div>
10V)U
Pulsed Drain CurrentQ
Power DissipationU
T
C
= 25擄C
T
C
= 90擄C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Q
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
Symbol
R
胃JA
R
胃JL
Max.
50
2.0
Units
擄C/W
擄C/W
T
J
, T
STG
I
S
I
SM
T
C
= 25擄C
T
C
= 90擄C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRLR8503
30
鹵20
44
32
196
62
30
鈥?5 to 150
15
196
擄C
A
W
A
Units
V
www.irf.com
1
12/21/00
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