IRLR8103V Datasheet

IC型號(hào)：
IRLR8103V
PDF描述：
N-Channel Application-Specific MOSFETs
文件大?。?/label>
151.85KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD-94021C

IRLR8103V

鈥?/div>

N-Channel Application-Specific MOSFETs

Ideal for CPU Core DC-DC Converters

Low Conduction Losses

Low Switching Losses

Minimizes Parallel MOSFETs for high current

applications

鈥?/div>

100% R

Tested

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

The IRLR8103V has been optimized for all parameters

that are critical in synchronous buck converters including

DS(on)

, gate charge and Cdv/dt-induced turn-on immunity.

The IRLR8103V offers an extremely low combination of

& R

DS(on)

for reduced losses in both control and

synchronous FET applications.

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical

PCB mount application.

D-Pak

DEVICE CHARACTERISTICS聟

DS(on)

OSS

IRLR8103V

7.9 m鈩?/div>

27 nC

12 nC

29nC

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source Current

> 10V)

Pulsed Drain Current

TC = 25擄C

TC= 90擄C

Symbol

, T

STG

IRLR8103V

鹵20

363

115

-55 to 150

363

Units

聶

TC = 25擄C

Power Dissipation

e脙脙脙脙脙脙脙脙脙脙脙脙脙

TC = 90擄C

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

擄C

聶

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

胃JA

胃JC

Typ.

鈥撯€撯€?/div>

Max.

1.09

Units

擄C/W

www.irf.com

10/22/04

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