IRLR4343 Datasheet

IC型號：
IRLR4343
PDF描述：
DIGITAL AUDIO MOSFET
文件大?。?/label>
248.05KB
PDF頁數(shù)：
10頁
芯片廠家：
IRF

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上傳產品規(guī)格書

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PD - 95851

DIGITAL AUDIO MOSFET

Features

Advanced Process Technology

Key Parameters Optimized for Class-D Audio

Amplifier Applications

Low R

DSON

for Improved Efficiency

Low Q

and Q

for Better THD and Improved

Efficiency

Low Q

for Better THD and Lower EMI

175擄C Operating Junction Temperature for

Ruggedness

Repetitive Avalanche Capability for Robustness and

Reliability

Multiple Package Options

IRLR4343

IRLU4343

IRLU4343-701

Key Parameters

175

擄C

DS(ON)

typ. @ V

= 10V

DS(ON)

typ. @ V

= 4.5V

typ.

max

I-Pak

IRLU4343

I-Pak Leadform 701

IRLU4343-701

Refer to page 10 for package outline

D-Pak

IRLR4343

Description

This Digital Audio HEXFET

廬

is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175擄C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 100擄C

= 25擄C

= 100擄C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Clamping Pressure

Max.

鹵20

0.53

-40 to + 175

鈥撯€撯€?/div>

Units

W/擄C

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case

Junction-to-Ambient (PCB Mounted)

Junction-to-Ambient (free air)

Typ.

鈥撯€撯€?/div>

Max.

1.9

110

Units

擄C/W

Notes

聛

through

聤

are on page 10

www.irf.com

3/26/04

標準包裝
75
類別
分離式半導體產品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
55V
電流 - 連續(xù)漏極(Id) @ 25° C
26A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
50 毫歐 @ 4.7A，10V
Id 時的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
42nC @ 10V
輸入電容 (Ciss) @ Vds
740pF @ 50V
功率 - 最大
79W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應商設備封裝
D-Pak
包裝
管件
其它名稱
*IRLR4343

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