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IRLR3915 Datasheet

  • IRLR3915

  • HEXFET Power MOSFET

  • 11頁

  • IRF

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PD - 94543
AUTOMOTIVE MOSFET
IRLR3915
IRLU3915
HEXFET
廬
Power MOSFET
D
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 55V
R
DS(on)
= 14m鈩?/div>
S
Description
Specifically designed for Automotive applications,
this HEXFET廬 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175擄C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
I
D
= 30A
D-Pak
IRLR3915
I-Pak
IRLU3915
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Single Pulse Avalanche Energy Tested Value聡
Avalanche Current聛
Repetitive Avalanche Energy聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
43
30
240
120
0.77
鹵 16
200
600
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
300 (1.6mm from case )
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)聢
Junction-to-Ambient鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
110
Max.
1.3
50
Units
擄C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
09/06/02

IRLR3915相關(guān)型號PDF文件下載

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  • 英文版
    ADVANCED POWER MOSFET
    FAIRCHILD
  • 英文版
    ADVANCED POWER MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | ...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7.5A I(D) ...
    ETC

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