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IRLR2905Z Datasheet

  • IRLR2905Z

  • AUTOMOTIVE MOSFET

  • 11頁

  • IRF

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PD - 95848
AUTOMOTIVE MOSFET
IRLR2905Z
IRLU2905Z
HEXFET
Power MOSFET
D
Features
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Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
G
S
R
DS(on)
= 13.5m鈩?/div>
I
D
= 42A
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRLR2905Z
Max.
60
43
42
240
110
I-Pak
IRLU2905Z
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25擄C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
W
W/擄C
V
mJ
A
mJ
d
0.72
鹵 16
I
AR
E
AR
T
J
T
STG
Avalanche Current
脙聶
h
57
85
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
擄C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.38
40
110
Units
擄C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
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HEXFET
is a registered trademark of International Rectifier.
www.irf.com
1
3/2/04

IRLR2905Z 產(chǎn)品屬性

  • 75

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道,金屬氧化物

  • 邏輯電平門

  • 55V

  • 42A

  • 13.5 毫歐 @ 36A,10V

  • 3V @ 250µA

  • 35nC @ 5V

  • 1570pF @ 25V

  • 110W

  • 表面貼裝

  • TO-252-3,DPak(2 引線+接片),SC-63

  • D-Pak

  • 管件

  • *IRLR2905Z

IRLR2905Z相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    MOSFET N-CH 60V 7.7A DPAK
  • 英文版
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  • 英文版
    MOSFET N-CH 60V 14A DPAK
  • 英文版
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    IRF [Inter...
  • 英文版
    POWER MOSFET
    IRF
  • 英文版
    POWER MOSFET
    IRF [Inter...
  • TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | T...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.7A I(D) ...
    ETC
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 7.9A I(D) |...
    ETC
  • 英文版
    ADVANCED POWER MOSFET
    FAIRCHILD
  • 英文版
    ADVANCED POWER MOSFET
    FAIRCHILD ...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7.5A I(D) ...
    ETC

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