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IRLMS6802 Datasheet

  • IRLMS6802

  • HEXFET Power MOSFET

  • 7頁

  • IRF

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PD- 91848E
IRLMS6802
HEXFET
廬
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
D
1
6
A
D
V
DSS
= -20V
D
2
5
D
G
3
4
S
R
DS(on)
= 0.050鈩?/div>
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6錚?package with its customized leadframe
produces a HEXFET
餂?/div>
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6盲
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy聞
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
鹵 12
-55 to + 150
Units
V
A
W
W/擄C
mJ
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聝
Max.
62.5
Units
擄C/W
www.irf.com
1
01/13/03

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