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IRLMS5703 Datasheet

  • IRLMS5703

  • HEXFET Power MOSFET

  • 9頁

  • IRF

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PD - 91413E
IRLMS5703
HEXFET
廬
Power MOSFET
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low Rds(on)
P-Channel MOSFET
D
1
6
A
D
V
DSS
= -30V
D
2
5
D
G
3
4
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
R
DS(on)
= 0.20鈩?/div>
T op V iew
M icro 6
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@- 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
-2.3
-1.9
-13
1.7
13
鹵 20
5.0
-55 to + 150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Maximum Junction-to-Ambient
聞
Min.
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
Max
75
Units
擄C/W
4/7/04

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