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IRLML6402 Datasheet

  • IRLML6402

  • HEXFET Power MOSFET

  • 8頁

  • IRF

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PD- 93755
IRLML6402
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
D
V
DSS
= -20V
G
S
R
DS(on)
= 0.065鈩?/div>
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
廬
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3鈩? is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Micro3鈩?/div>
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy聞
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
鹵 12
-55 to + 150
Units
V
A
W
W/擄C
mJ
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient聝
Typ.
75
Max.
100
Units
擄C/W
www.irf.com
1
8/13/99

IRLML6402 產(chǎn)品屬性

  • 588 ns

  • 350 ns

  • 8 nC V @ -5

  • 633 pF V @ -10

  • 表面貼裝

  • 1.4mm

  • SOT-23

  • 3.04 x 1.4 x 1.02mm

  • 3

  • -55 °C

  • 1.3 W

  • ±12 V

  • -20 V

  • 0.135

  • -3.7 A

  • +150 °C

  • 1

  • 功率 MOSFET

  • 增強

  • P

  • 單

  • 3.04mm

  • 1.02mm

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