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IRLML6402TR Datasheet

  • IRLML6402TR

  • HEXFET Power MOSFET

  • 9頁(yè)

  • IRF

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PD - 93755B
IRLML6402
HEXFET
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
D
V
DSS
= -20V
G
S
R
DS(on)
= 0.065鈩?/div>
Description
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
餂?/div>
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3錚? is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Micro3錚?/div>
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy聞
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
鹵 12
-55 to + 150
Units
V
A
W
W/擄C
mJ
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient聝
Typ.
75
Max.
100
Units
擄C/W
www.irf.com
1
04/29/03

IRLML6402TR 產(chǎn)品屬性

  • 1

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET P 通道,金屬氧化物

  • 邏輯電平門

  • 20V

  • 3.7A

  • 65 毫歐 @ 3.7A,4.5V

  • 1.2V @ 250µA

  • 12nC @ 5V

  • 633pF @ 10V

  • 1.3W

  • 表面貼裝

  • TO-236-3,SC-59,SOT-23-3

  • Micro3?/SOT-23

  • 剪切帶 (CT)

  • *IRLML6402TRIRLML6402IRLML6402-NDIRLML6402CT

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