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IRLML6401 Datasheet

  • IRLML6401

  • HEXFET Power MOSFET

  • 9頁

  • IRF

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PD - 93756D
IRLML6401
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V Gate Rated
HEXFET
廬
Power MOSFET
G 1
V
DSS
= -12V
3 D
S
2
R
DS(on)
= 0.05鈩?/div>
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
餂?/div>
power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3錚? is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3錚?/div>
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy聞
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
鹵 8.0
-55 to + 150
Units
V
A
W
W/擄C
mJ
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient聝
Typ.
75
Max.
100
Units
擄C/W
www.irf.com
1
04/29/03

IRLML6401 產(chǎn)品屬性

  • 4,632現(xiàn)貨

  • 1 : ￥4.05000剪切帶（CT）3,000 : ￥1.11466卷帶（TR）

  • UMW

  • 卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 在售

  • P 通道

  • MOSFET（金屬氧化物）

  • 12 V

  • 4.3A（Ta）

  • 1.8V，4.5V

  • 50 毫歐 @ 4.3A，4.5V

  • 950mV @ 250μA

  • 15 nC @ 5 V

  • ±8V

  • 830 pF @ 10 V

  • -

  • 1.3W（Ta）

  • 150°C（TJ）

  • 表面貼裝型

  • SOT-23

  • TO-236-3，SC-59，SOT-23-3

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