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IRLM220A Datasheet

  • IRLM220A

  • Advanced Power MOSFET

  • 244.93KB

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
錕?frac12;
Avalanche Rugged Technology
錕?frac12;
Rugged Gate Oxide Technology
錕?frac12;
Lower Input Capacitance
錕?frac12;
Improved Gate Charge
錕?frac12;
Extended Safe Operating Area
錕?frac12;
Lower Leakage Current : 10
碌A(chǔ)
(Max.) @ V
DS
= 200V
錕?frac12;
Lower R
DS(ON)
: 0.609
鈩?/div>
(Typ.)
IRLM220A
BV
DSS
= 200 V
R
DS(on)
= 0.8
鈩?/div>
I
D
= 1.13 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25擄C)
Continuous Drain Current (T
A
=70擄C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25擄C) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
200
1.13
0.9
9
鹵20
29
1.13
0.2
5
2
0.016
- 55 to +150
擄C
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
Thermal Resistance
Symbol
R
胃JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
62.5
Units
擄C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. A

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