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IRLM110A Datasheet

  • IRLM110A

  • Advanced Power MOSFET

  • 7頁

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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Advanced Power MOSFET
FEATURES
錕?frac12;
Avalanche Rugged Technology
錕?frac12;
Rugged Gate Oxide Technology
錕?frac12;
Lower Input Capacitance
錕?frac12;
Improved Gate Charge
錕?frac12;
Extended Safe Operating Area
錕?frac12;
Lower Leakage Current : 10
碌A(chǔ)
(Max.) @ V
DS
= 100V
錕?frac12;
Lower R
DS(ON)
: 0.336
鈩?/div>
(Typ.)
IRLM110A
BV
DSS
= 100 V
R
DS(on)
= 0.44
鈩?/div>
I
D
= 1.5 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=70 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25 C) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
300
- 55 to +150
o
o
o
o
Value
100
1.5
1.18
(1)
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
12
鹵20
60
1.5
0.22
6.5
2.2
0.018
(2)
(1)
(1)
(3)
C
Thermal Resistance
Symbol
R
胃JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
56.8
Units
o
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. A

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