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IRLL110 Datasheet

  • IRLL110

  • Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

  • 219.44KB

  • 8頁

  • IRF

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PD - 90869A
IRLL110
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on)Specified at VGS= 4V & 5V
Fast Switching
D
V
DSS
= 100V
R
DS(on)
= 0.54鈩?/div>
G
S
I
D
= 1.5A
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
I
D
@ Tc = 25擄C
I
D
@ Tc = 100擄C
I
DM
P
D
@Tc = 25擄C
P
D
@T
A
= 25擄C
Continuous Drain Current, V
GS
@ 5.0 V
Continuous Drain Current, V
GS
@ 5.0 V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
Max.
1.5
0.93
12
3.1
2..0
0.025
0.017
-/+10
50
1.5
0.31
5.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
40
60
Units
擄C/W
** When mounted on 1'' square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
1
1/27/99

IRLL110 產(chǎn)品屬性

  • 4,000

  • 分離式半導體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 100V

  • 1.5A

  • 540 毫歐 @ 900mA，5V

  • 2V @ 250µA

  • 6.1nC @ 5V

  • 250pF @ 25V

  • 2W

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • 管件

  • *IRLL110

IRLL110相關(guān)型號PDF文件下載

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