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IRLL024Z Datasheet

  • IRLL024Z

  • AUTOMOTIVE MOSFET

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 95886A
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
IRLL024Z
HEXFET
廬
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
150擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
R
DS(on)
= 60m鈩?/div>
G
S
I
D
= 5.0A
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 150擄C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 25擄C
V
GS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
i
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Parameter
Max.
5.0
4.0
40
2.8
1.0
0.02
鹵 16
Units
A
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
i
j
聶
i
i
d
h
W
W/擄C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Single Pulse Avalanche Energy Tested Value
脙聶
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
擄C
Thermal Resistance
R
胃JA
R
胃JA
i
Junction-to-Ambient (PCB mount, steady state)
j
Junction-to-Ambient (PCB mount, steady state)
Parameter
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
45
120
Units
擄C/W
www.irf.com
1
08/03/04

IRLL024Z 產(chǎn)品屬性

  • 80

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 5A

  • 60 毫歐 @ 3A，10V

  • 3V @ 250µA

  • 11nC @ 5V

  • 380pF @ 25V

  • 1W

  • 表面貼裝

  • TO-261-4，TO-261AA

  • SOT-223

  • 管件

  • *IRLL024Z

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