= 0.065鈩?/div>
Benefits
q
q
q
q
q
q
S
I
D
= 3.1A
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power MOSFET
in a SOT-223 package utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of this Automotive
qualified HEXFET Power MOSFET are a 175擄C junction operating temperature,
fast switching speed and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SOT-223 package is designed for surface mount and the enlarged tab
provides improved thermal characteristics making it ideal in a variety of power
applications. Power dissipation of 1.0W is possible in a typical surface mount
application. Available in Tape & Reel.
SOT-223
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 70擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Q
Power Dissipation
S
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyT
Avalanche CurrentQ
Repetitive Avalanche EnergyV
Peak Diode Recovery dv/dt
U
Junction and Storage Temperature Range
Max.
3.1
2.6
12
1.3
8.3
鹵16
87
See Fig.16c, 16d, 19, 20
9.9
-55 to + 175
Units
A
W
mW/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JA
R
胃JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90
50
Max.
120
60
Units
擄C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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03/16/01