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IRLIB9343PBF Datasheet

  • IRLIB9343PBF

  • DIGITAL AUDIO MOSFET

  • 209.25KB

  • 7頁(yè)

  • IRF

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PD - 95745
DIGITAL AUDIO MOSFET
IRLIB9343PbF
Features
Advanced Process Technology
l
Key Parameters Optimized for Class-D Audio
Amplifier Applications
l
Low R
DSON
for Improved Efficiency
l
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
l
Low Q
rr
for Better THD and Lower EMI
l
175擄C Operating Junction Temperature for
Ruggedness
l
Repetitive Avalanche Capability for Robustness and
Reliability
l
Lead-Free
l
Key Parameters
V
DS
R
DS(ON)
typ. @ V
GS
= -10V
R
DS(ON)
typ. @ V
GS
= -4.5V
Q
g
typ.
T
J
max
D
-55
93
150
31
175
V
m
:
m
:
nC
擄C
G
S
TO-220 Full-Pak
Description
This Digital Audio HEXFET
廬
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175擄C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
C
= 100擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Max.
-55
鹵20
-14
-10
-60
33
20
0.26
-40 to + 175
10 (1.1)
Units
V
A
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
W
W/擄C
擄C
lbf in (N m)
y
y
Thermal Resistance
R
胃JC
R
胃JA
Junction-to-Case
f
Parameter
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
3.84
65
Units
擄C/W
Junction-to-Ambient
f
Notes
聛
through
聟
are on page 7
www.irf.com
1
8/23/04

IRLIB9343PBF 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET P 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 55V

  • 14A

  • 105 毫歐 @ 3.4A，10V

  • 1V @ 250µA

  • 47nC @ 10V

  • 660pF @ 50V

  • 33W

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRLIB9343PBF

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