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PD - 9.1237
IRLI640G
HEXFET
廬
Power MOSFET
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
V
DSS
= 200V
R
DS(on)
= 0.18
鈩?/div>
I
D
= 9.9A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
9.9
6.3
40
40
0.32
鹵10
290
9.9
4.0
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
JA
Junction-to-Case
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
3.1
65
Units
擄C/W
To Order
Revision 0
IRLI640相關(guān)型號(hào)PDF文件下載
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