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PD - 9.1236
IRLI630G
HEXFET
廬
Power MOSFET
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
V
DSS
= 200V
R
DS(on)
= 0.40
鈩?/div>
I
D
= 6.2A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
6.2
3.9
25
35
0.28
鹵10
125
6.2
3.5
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
JA
Junction-to-Case
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
3.6
65
Units
擄C/W
To Order
Revision 0
IRLI630G 產(chǎn)品屬性
1,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
邏輯電平門
200V
6.2A
400 毫歐 @ 3.7A，5V
2V @ 250µA
40nC @ 10V
1100pF @ 25V
35W
通孔
TO-220-3 全封裝，隔離接片
TO-220-3
管件
*IRLI630G
IRLI630G相關(guān)型號PDF文件下載
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