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IRLI540NPBF Datasheet

  • IRLI540NPBF

  • HEXFET Power MOSFET

  • 255.84KB

  • 8頁(yè)

  • IRF

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IRLI540NPbF
Logic-Level Gate Drive
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
聟
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
l
Lead-Free
Description
l
PD -95454
HEXFET
廬
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 0.044鈩?/div>
G
S
I
D
= 23A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聠
Avalanche Current聛聠
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
TO-220 FULLP
AK
Absolute Maximum Ratings
Max.
23
16
120
54
0.36
鹵 16
310
18
5.4
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf聲in (1.1N聲m)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
聳聳聳
聳聳聳
Max.
2.8
65
Units
擄C/W
6/23/04

IRLI540NPBF 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 100V

  • 23A

  • 44 毫歐 @ 12A，10V

  • 2V @ 250µA

  • 74nC @ 5V

  • 1800pF @ 25V

  • 54W

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRLI540NPBF

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