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IRLI3803 Datasheet

  • IRLI3803

  • HEXFET Power MOSFET

  • 8頁(yè)

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 9.1320B
IRLI3803
HEXFET
廬
Power MOSFET
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
聟
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 30V
R
DS(on)
= 0.006鈩?/div>
G
I
D
= 76A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜聠
Avalanche Current聛聠
Repetitive Avalanche Current聛
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
76
54
470
63
0.42
鹵16
610
71
6.3
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
2.4
65
Units
擄C/W
8/25/97

IRLI3803 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 76A

  • 6 毫歐 @ 40A，10V

  • 1V @ 250µA

  • 140nC @ 4.5V

  • 5000pF @ 25V

  • 63W

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRLI3803

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