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IRLI2910 Datasheet

  • IRLI2910

  • HEXFET Power MOSFET

  • 145.67KB

  • 8頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 9.1384B
PRELIMINARY
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
聟
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
IRLI2910
HEXFET
廬
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 0.026鈩?/div>
G
I
D
= 31A
S
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聠
Avalanche Current聛聠
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
31
22
190
63
0.42
鹵16
520
29
6.3
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
2.4
65
Units
擄C/W
擄C/W
3/16/98

IRLI2910 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 100V

  • 31A

  • 26 毫歐 @ 16A，10V

  • 2V @ 250µA

  • 140nC @ 5V

  • 3700pF @ 25V

  • 63W

  • 通孔

  • TO-220-3 整包

  • TO-220AB 整包

  • 管件

  • *IRLI2910

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