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IRLBL1304 Datasheet

  • IRLBL1304

  • TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 95A I(D) | ...

  • 8頁(yè)

  • ETC

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PD- 91843A
IRLBL1304
HEXFET
Power MOSFET
l
l
l
l
l
l
l
>1mm lower profile than D
2
Pak
Same footprint as D
2
pak
Logic Level Gate
Surface mount
Ultra Low On-Resistance
Fully Avalanche Rated
50% greater current in typ. application
condition vs. D
2
Pak
D
V
DSS
= 40V
G
S
R
DS(on)
= 0.0045鈩?/div>
I
D
= 185A聟
Description
The HEXFET
MOSFET is the most popular power MOSFET in the world.
This particular HEXFET
MOSFET is in the SuperD
2
Pak
TM
and has
the same
outline and pinout as the standard D
2
Pak but has increased current handling
capability and >1mm lower profile. This makes it ideal to reduce component
count in multiparallel D
2
Pak operation, reduce system power dissipation or
upgrade existing design.
This package has also been designed to meet automotive qualification
standard Q101 and can be used with normal surface mouting equipment
and has the same temperature profile and recommendations as the
commonly used D
2
Pak.
Super-D
2
Pak
TM
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聠
Continuous Drain Current, V
GS
@ 10V聠
Pulsed Drain Current
聛聠
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聠
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
鹵 16
1160
100
30
5.0
-55 to + 175
260 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.50
40
Units
W
* Current capability in normal application, see Fig.9.
www.irf.com
1
2/16/00

IRLBL1304 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • HEXFET?

  • 管件

  • 停產(chǎn)

  • N 通道

  • MOSFET(金屬氧化物)

  • 40 V

  • 185A(Tc)

  • 4.5V,10V

  • 4.5 毫歐 @ 110A,10V

  • 1V @ 250μA

  • 140 nC @ 4.5 V

  • ±16V

  • 7660 pF @ 25 V

  • -

  • 300W(Tc)

  • -

  • 表面貼裝型

  • 超級(jí) D2-封裝

  • 超級(jí) D2-封裝

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