= 0.018鈩?/div>
I
D
= 59A聠
Description
The IRLBD59N04E is a 40V, N-channel HEXFET
廬
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
I
G
V
ESD
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
V
GS
Clamp Current
Electrostatic Votage Rating聡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
5 Lead-D
2
Pak
Max.
59聠
41
230
130
0.89
鹵 10
320
35
13
2.2
鹵 50
鹵 2.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
mA
kV
擄C
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.12
40
Units
擄C/W
www.irf.com
1
4/11/00
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