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PD - 9.1254
IRL630S
HEXFET
廬
Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
150擄C Operating Temperature
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
V
DSS
= 200V
R
DS(on)
= 0.40
鈩?/div>
I
D
= 9.0A
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
C
= 25擄C
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.0
5.7
36
74
3.1
0.59
0.025
鹵10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
胃
JC
R
胃
JA
R
胃
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
1.7
40
62
Units
擄C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
To Order
Revision 0
IRL630S相關(guān)型號PDF文件下載
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-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) ...
ETC
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) ...
ETC
-
英文版
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
IRF
-
英文版
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | ...
ETC
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) |...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) ...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF [Inter...
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