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PD -9.1218
IRL620S
HEXFET
廬
Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
=4V & 5V
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
V
DSS
= 200V
R
DS(on)
= 0.80
鈩?/div>
I
D
= 5.2A
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
A
= 25擄C
Continuous Drain Current, V
GS
@ 5.0 V
Continuous Drain Current, V
GS
@ 5.0 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.2
3.3
21
50
3.1
0.40
0.025
鹵10
125
5.2
5.0
5.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
胃
JC
R
胃
JA
R
胃
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
Max.
2.5
40
62
Units
擄C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
To Order
Revision 0
IRL620S相關(guān)型號(hào)PDF文件下載
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英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) ...
ETC
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF [Inter...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) ...
ETC
-
英文版
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
IRF
-
英文版
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
IRF [Inter...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | ...
ETC
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) |...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) ...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF [Inter...
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