0.04鈩?/div>
I
D
-11A
Fifth Generation HEXFET
廬
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
Logic Level Gate Drive
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25擄C Continuous Drain Current
ID @ VGS = -10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0 (Typical)
-11
-7.0
-44
50
0.4
鹵12
157
-11
5.0
0.7
-55 to 150
W
W/擄C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
For footnotes refer to the last page
www.irf.com
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8/8/01
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