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IRL3705ZS Datasheet

  • IRL3705ZS

  • AUTOMOTIVE MOSFET

  • 12頁(yè)

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 95854
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
IRL3705Z
IRL3705ZS
IRL3705ZL
HEXFET
廬
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 8.0m鈩?/div>
S
Description
Specifically designed for Automotive applications,
this HEXFET
廬
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
I
D
= 75A
TO-220AB
IRL3705Z
D
2
Pak
IRL3705ZS
TO-262
IRL3705ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
86
61
75
340
130
0.88
鹵 16
120
180
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
聶
d
脙聶
h
W
W/擄C
V
mJ
A
mJ
擄C
g
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
i
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Typ.
Max.
1.14
鈥撯€撯€?/div>
62
40
Units
擄C/W
i
i
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount)
j
www.irf.com
1
3/3/04

IRL3705ZS 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 75A

  • 8 毫歐 @ 52A，10V

  • 3V @ 250µA

  • 60nC @ 5V

  • 2880pF @ 25V

  • 130W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 管件

  • *IRL3705ZS

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