= 0.01鈩?/div>
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
D
= 85A聟
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100碌s)
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
85聟
54
340
110
0.91
鹵 10
14
290
51
11
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
1.1
鈥撯€撯€?/div>
62
Units
擄C/W
10/31/97
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