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IRL3103S Datasheet

  • IRL3103S

  • Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 94162
Advanced Process Technology
l
Surface Mount (IRL3103S)
l
Low-profile through-hole (IRL3103L)
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
IRL3103S
IRL3103L
HEXFET
廬
Power MOSFET
D
V
DSS
= 30V
R
DS(on)
= 12m鈩?/div>
Advanced HEXFET
廬
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
G
S
I
D
= 64A
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
D
2
Pak
IRL3103S
TO-262
IRL3103L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
64
45
220
94
0.63
鹵 16
34
22
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.6
40
Units
擄C/W
www.irf.com
1
02/14/02

IRL3103S 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 64A

  • 12 毫歐 @ 34A，10V

  • 1V @ 250µA

  • 33nC @ 4.5V

  • 1650pF @ 25V

  • 94W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 管件

  • *IRL3103S

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