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IRL3103D2 Datasheet

  • IRL3103D2

  • FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014o...

  • 6頁(yè)

  • IRF

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PD 9.1660
PRELIMINARY
l
l
l
l
l
IRL3103D2
D
FETKY
TM
MOSFET & SCHOTTKY RECTIFIER
Copackaged HEXFET
廬
Power MOSFET
and Schottky Diode
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
V
DSS
= 30V
R
DS(on)
= 0.014鈩?/div>
G
I
D
= 54A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
54
34
220
2.0
70
0.56
鹵 16
-55 to + 150
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W
W/擄C
V
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.8
62
Units
擄C/W
7/16/97

IRL3103D2 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • FETKY?

  • 管件

  • 停產(chǎn)

  • N 通道

  • MOSFET（金屬氧化物）

  • 30 V

  • 54A（Tc）

  • 4.5V，10V

  • 14 毫歐 @ 32A，10V

  • 1V @ 250μA

  • 44 nC @ 4.5 V

  • ±16V

  • 2300 pF @ 25 V

  • -

  • 2W（Ta），70W（Tc）

  • -

  • 通孔

  • TO-220AB

  • TO-220-3

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