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IRL3103D1 Datasheet

  • IRL3103D1

  • FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014o...

  • 6頁

  • IRF

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PD 9.1608C
IRL3103D1
FETKY
TM
MOSFET & SCHOTTKY RECTIFIER
l
l
l
l
l
Copackaged HEXFET
廬
Power MOSFET
and Schottky Diode
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
D
V
DSS
= 30V
R
DS(on)
= 0.014鈩?/div>
G
I
D
= 64A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聝
Continuous Drain Current, V
GS
@ 10V聝
Pulsed Drain Current
聛聝
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
64
45
220
2.0
89
0.56
鹵 16
-55 to + 150
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W
W/擄C
V
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.4
62
Units
擄C/W
12/16/97

IRL3103D1 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • FETKY™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 64A

  • 14 毫歐 @ 34A，10V

  • 1V @ 250µA

  • 43nC @ 4.5V

  • 1900pF @ 25V

  • 2W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRL3103D1

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