PD 9.1691A
PRELIMINARY
l
l
l
l
l
IRL3102S
HEXFET
廬
Power MOSFET
D
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
V
DSS
= 20V
G
S
R
DS(on)
= 0.013W
I
D
= 61A
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D
2
Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D
2
P ak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 4.5V聟
Continuous Drain Current, V
GS
@ 4.5V聟
Pulsed Drain Current
聛聟
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
39
240
89
0.71
鹵 10
220
35
8.9
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
qJC
R
qJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
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鈥撯€撯€?/div>
Max.
1.4
40
Units
擄C/W
9/16/97
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