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IRL2910S Datasheet

  • IRL2910S

  • HEXFET POWER MOSFET

  • 10頁

  • IRF

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上傳產品規(guī)格書

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PD - 91376C
IRL2910S/L
Logic-Level Gate Drive
l
Surface Mount
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
Fast Switching
l
Fully Avalanche Rated
Description
l
HEXFET
廬
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 0.026鈩?/div>
G
S
I
D
= 55A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
55
39
190
3.8
200
1.3
鹵 16
520
29
20
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
聳聳聳
聳聳聳
Max.
0.75
40
Units
擄C/W
10/09/03

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