PD - 9.1275
PRELIMINARY
IRL2310
HEXFET
廬
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4.5V & 10V
175擄C Operating Temperature
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design for which HEXFET Power MOSFETs are well
known, provides the designer with an extremely efficient device for use in a
wide variety of application.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
V
DSS
= 100V
R
DS(on)
= 0.040
鈩?/div>
I
D
= 40A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
40
29
160
170
1.1
鹵20
500
24
17
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.50
鈥撯€撯€撯€?/div>
Max.
0.90
鈥撯€撯€撯€?/div>
62
Units
擄C/W
Revision 1
IRL2310相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
IRF
-
英文版
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) |...
ETC
-
英文版
HEXFET? Power MOSFET
-
英文版
Power MOSFET
IRF
-
英文版
Power MOSFET
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
IRF
-
英文版
飛思卡爾
-
英文版
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A)
IRF [Inter...
-
英文版
Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A)
IRF
-
英文版
Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A)
IRF [Inter...
-
英文版
Power MOSFET
IRF
-
英文版
Power MOSFET
IRF [Inter...
-
英文版
Power MOSFET
IRF
-
英文版
Power MOSFET
IRF [Inter...
-
英文版
1.5 A Switch-Mode Power Supply with Linear Regulator
FREESCALE
1
2
3
4
