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IRL1104L Datasheet

  • IRL1104L

  • TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 104A I(D) |...

  • 194.25KB

  • 10頁

  • ETC

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PD -91840
PRELIMINARY
l
l
l
l
l
l
l
IRL1104S/L
HEXFET
廬
Power MOSFET
D
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL1104S)
Low-profile through-hole (IRL1104L)
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
V
DSS
= 40V
R
DS(on)
= 0.008鈩?/div>
G
I
D
= 104A聠
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for low-
profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
104
聠
74
聠
416
2.4
167
1.1
鹵16
340
62
17
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.9
62
Units
擄C/W
www.irf.com
1
10/28/98

IRL1104L 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 40V

  • 104A

  • 8 毫歐 @ 62A，10V

  • 1V @ 250µA

  • 68nC @ 4.5V

  • 3445pF @ 25V

  • 2.4W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • TO-262

  • 管件

  • *IRL1104L

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