= 0.0065鈩?/div>
G
I
D
= 130A聟
S
Fifth Generation HEXFET
廬
power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
130聟
92聟
520
200
1.3
鹵 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
qJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.75
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
11/29/99
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