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IRL1004S Datasheet

  • IRL1004S

  • TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 110A I(D) |...

  • 124.66KB

  • 10頁

  • ETC

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PD - 91644A
IRL1004S
IRL1004L
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
HEXFET
廬
Power MOSFET
D
V
DSS
= 40V
G
S
R
DS(on)
= 0.0065鈩?/div>
I
D
= 130A聟
Fifth Generation HEXFET
廬
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for low-
profile application.
D
2
Pak
IRL1004S
TO-262
IRL1004L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聠
Continuous Drain Current, V
GS
@ 10V聠
Pulsed Drain Current
聛聠
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聠
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
130
聟
92
聟
520
3.8
200
1.3
鹵 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)*
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.75
40
Units
擄C/W
www.irf.com
1
12/29/99

IRL1004S 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 40V

  • 130A

  • 6.5 毫歐 @ 78A，10V

  • 1V @ 250µA

  • 100nC @ 4.5V

  • 5330pF @ 25V

  • 3.8W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 管件

  • *IRL1004S

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