鈥?/div>
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
鈥uilt-in
Start-up circuit (the power loss in the start-up circuit is
reduced by cutting off the start-up circuit after the IC starts its
operation.)
鈥uto
Burst Stand-by (realizing input power<0.1W at no load)
鈥uto
Bias Function (stable burst operation without the interference on
transformer)
鈥wo
operational modes by auto switching functions
For normal operation: PRC mode
For stand-by operation (at light load): Burst mode
鈥uilt-in
Leading Edge Blanking Function
8 Lead PDIP
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Built-in constant voltage drive circuit
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Key Specifications
Overvoltage Protection with latch mode (OVP)
MOSFET
RDS(ON)
Thermal Shutdown with latch mode (TSD)
Features
INTEGRATED SWITCHER
Type
VDSS(V)
500
MAX
ACinput(V)
Pout(W)
Note 1
10
Descriptions
IRIS-A6131
3.95
惟
100/120
鹵
15%
IRIS-A6131 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC
fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC
operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply
system reducing external component count and simplifying the circuit design.
Note: PRC is abbreviation for 鈥淧ulse Ratio Control鈥?(On-width control with fixed OFF-time).
Typical Connection Diagram
8
D
D
7
6
NC
5
Startup
IRIS-A6
1
3
1
OCP
1
Vcc
2
GND
3
FB
4
Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by
approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the
Pout (W) shall become lower than that of above value.
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