0.082鈩?/div>
I
D
20A
Low-Ohmic
TO-257AA
International Rectifier鈥檚 R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID@ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Pack. Mounting Surface Temp.
Weight
For footnotes refer to the last page
20
12.5
80
75
0.6
鹵20
73
20
7.5
11.3
-55 to 150
300 (for 5s)
3.7 (Typical)
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
10/28/04