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IRHYB63134CM Datasheet

  • IRHYB63134CM

  • RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257A...

  • 181.58KB

  • 8頁

  • IRF

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PD-96997
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
Radiation Level R
DS(on)
IRHYB67134CM 100K Rads (Si) 0.09鈩?/div>
IRHYB63134CM 300K Rads (Si)
0.09鈩?/div>
I
D
19A
19A
IRHYB67134CM
150V, N-CHANNEL
TECHNOLOGY
International Rectifier鈥檚 R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today鈥檚
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA (Tab-less)
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
脌
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
19
12
76
75
0.6
鹵20
67
19
7.5
7.8
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
www.irf.com
1
05/09/05

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