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IRHYB67130CM Datasheet

  • IRHYB67130CM

  • RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257A...

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  • IRF

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PD-95841A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
Radiation Level R
DS(on)
IRHYB67130CM 100K Rads (Si) 0.042鈩?/div>
IRHYB63130CM 300K Rads (Si)
0.042鈩?/div>
I
D
20A*
20A*
IRHYB67130CM
100V, N-CHANNEL
TECHNOLOGY
Low-Ohmic
TO-257AA Tabless
International Rectifier鈥檚 R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today鈥檚
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
20*
19
80
75
0.6
鹵20
107
20
7.5
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
www.irf.com
1
11/18/04

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