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IRHSNA58064 Datasheet

  • IRHSNA58064

  • RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2)

  • 9頁(yè)

  • IRF

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PD-94323C
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level R
DS(on)
Q
G
IRHSNA57064 100K Rads (Si) 5.6m鈩?160nC
IRHSNA53064 300K Rads (Si) 5.6m鈩?160nC
IRHSNA54064
600K Rads (Si)
5.6m鈩?160nC
SMD-2
IRHSNA58064 1000K Rads (Si) 6.5m鈩?160nC
IRHSNA57064
60V, N-CHANNEL
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier鈥檚 low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
n
n
n
n
n
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSLNA57064 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25擄C
IF (AV)@ TC =100擄C
TJ, TSTG
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Schottky and Body Diode Avg. Forward Current
鉃?/div>
Schottky and Body Diode Avg. Forward Current
鉃?/div>
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
Units
75*
75*
300
250
2.0
鹵20
370
75
25
75*
75*
-55 to 150
300 (for 5s)
3.3 (Typical)
A
W
W/擄C
V
mJ
A
mJ
A
擄C
g
www.irf.com
1
07/30/02

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