IRHSLNA57Z60 4.0m鈩?/div>
Q
G
200nC
IRHSLNA57Z60
30V, N-CHANNEL
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier鈥檚 low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
n
n
n
n
n
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSNA57Z60 for Lower R
DS(on)
Absolute Maximum Ratings
Parameter
ID@ VGS = 12V, TC = 25擄C
ID@ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
VDS
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulse Drain Current
鉃€
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Drain-to-Source Voltage
75*
75*
300
250
2.0
+20
30
75*
75*
-55 to 150
300 (for 10sec)
3.3 (Typical)
Units
A
W
W/擄C
V
A
擄C
g
IF(AV)@VGS =12V, TC =25擄C Schottky and Body Diode Avg. Forward Current聝
IF(AV)@VGS =12V, TC =100擄C Schottky and Body Diode Avg. Forward Current聝
TJ, TSTG
Operating Junction and Storage Temperature Range
Package Mounting Surface Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/15/02