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IRHQ567110 Datasheet

  • IRHQ567110

  • 100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package

  • 14頁

  • ETC

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上傳產(chǎn)品規(guī)格書

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PD - 94057B
IRHQ567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
RAD-Hard HEXFET
POWER MOSFET
SURFACE MOUNT (LCC-28)
4
#
TECHNOLOGY

鈩?/div>
廬
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ567110 100K Rads (Si) 0.27鈩?/div>
IRHQ563110 300K Rads (Si) 0.29鈩?/div>
IRHQ567110 100K Rads (Si)
0.96鈩?/div>
IRHQ563110 300K Rads (Si)
0.98鈩?/div>
I
D
4.6A
4.6A
-2.8A
-2.8A
CHANNEL
N
N
P
P
LCC-28
International Rectifier鈥檚 RAD-Hard
TM
HEXFET
廬
MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = 鹵12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 鹵12V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
N-Channel
4.6
2.9
18.4
12
0.1
鹵20
47
鉃?/div>
4.6
1.2
6.1
鉃?/div>
-55 to 150
o
P-Channel
-2.8
-1.8
-11.2
12
0.1
Units
A
W
W/擄C
鹵20
70
~
-2.8
1.2
7.1

V
mJ
A
mJ
V/ns
C
g
www.irf.com
1
07/25/01

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